Roll-to-roll reactive ion etching of large-area nanostructure arrays in Si: Process development, characterization, and optimization

Roll-to-roll (R2R) nanofabrication processes are recognized as key enabling-technologies for many next-generation applications in flexible electronics, displays, energy generation, storage, well healthcare. However, R2R processing techniques reported the literature currently lack a scalable method of performing high-throughput nanoscale pattern transfer geometry requiring high degree fidelity terms critical dimension resolution, etch uniformity, and aspect ratio. Reactive ion etching (RIE) addresses need sub-10 nm with large-area uniformity wafer-scale semiconductor manufacturing, but adapting plasma systems use nanopatterning has proven to be nontrivial. Moreover, robust models simulating RIE do not exist, which is an obstacle creation computational approaches design, control, scale-up equipment processes. To address these challenges, we demonstrate process flow fabricating Si nanopillar arrays utilizing combination nanoimprint lithography all steps performed using reactor system. Specifically discussed development details imprint resist including rates, cross-web directionality, selectivity at varying gas chemistries, powers, pressures. 2 k full-factorial Design Experiments (DoEs) ordinary least-squares regression analysis also employed study influence parameters on multiple outgoing quality characteristics generate stochastic into Si. Utilizing DOE-based desired targets characteristics, describe bounded multivariate inverse-optimization scheme automated parameter tuning. The culmination efforts, best authors' knowledge, first RIE-based 100 nm-scale features continuous fashion control feature over large area. methodology herein may applied similarly additional materials geometries future applications.